Lateral Spin Injection in Germanium Nanowires
نویسندگان
چکیده
منابع مشابه
Lateral spin injection in germanium nanowires.
Electrical injection of spin-polarized electrons into a semiconductor, large spin diffusion length, and an integration friendly platform are desirable ingredients for spin-based devices. Here we demonstrate lateral spin injection and detection in germanium nanowires, by using ferromagnetic metal contacts and tunnel barriers for contact resistance engineering. Using data measured from over 80 sa...
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Electrical spin injection into semiconductors paves the way for exploring new phenomena in the area of spin physics and new generations of spintronic devices. However the exact role of interface states in the spin injection mechanism from a magnetic tunnel junction into a semiconductor is still under debate. In this Letter, we demonstrate a clear transition from spin accumulation into interface...
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ژورنال
عنوان ژورنال: Nano Letters
سال: 2010
ISSN: 1530-6984,1530-6992
DOI: 10.1021/nl1008663